The target of this thesis is to fabricate through Silicon via (TSV) structures based on Si-bench technology for high-speed transmission interface. In this process, Si via with a depth of 250 £gm were formed by dry etching on a 500 £gm thick <111> Si wafer. The TSV were then obtained by removing the bottom of the silicon wafer using grinding technique. To reduce microwave loss of high frequency signal transmission, we oxidized the TSV by oxygen wet oxidation at a temperature of 1000 oC. Finally, conductive paths through the TSV were formed by filling silver epoxy into the via and dry at a temperature of 200 oC for 1 hour. The s parameters of the high speed TSV structure was characterized by a Vector Network Analyzer. Si-bench technology can effectively improve system integration and performance while reducing cost and size of the module package.
.
Key words: Through silicon via, microwave loss, s parameters
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728112-031923 |
| Date | 28 July 2012 |
| Creators | Huang, Shu-Ting |
| Contributors | Ting-Chang Chuang, Yi-Jen Chiu, Chao-Kuei Lee, Ann-Kuo Chu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728112-031923 |
| Rights | user_define, Copyright information available at source archive |
Page generated in 0.002 seconds