Optical beam induced current mapping has found wide-spread applications in charactering semiconductor devices and integrated circuitry. Conventionally a focused cw laser beam is employed to excite carriers in the depletion region that is subsequently detected to form the contrast signal for scanning imaging. Device defects that may quench the photo-generated carriers can then be easily revealed. However, such detection is static in nature and the dynamics behavior of a device remains unknown. In this study, we are using a pulsed laser with high repetition rate and a high frequency phase sensitive lock-in loop to achieve temporal resolution at sub-nanosecond. In this way, the temporal response at a selected position on the device can be characterized
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0701106-152121 |
| Date | 01 July 2006 |
| Creators | Liao, Yu-chi |
| Contributors | Tzyy-sheng Horng, Fu-jen Kao, Yi-jen Chiu, Cheng-wen Ko |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701106-152121 |
| Rights | restricted, Copyright information available at source archive |
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