When the size of display panel increased, the RC delay of TFTs became serious.In order to solve this problem, it is necessary to incorporate a high dielectric (high-k) material used as the gate oxide can increase the gate oxide capacitance Co, which can induce a higher drain current and higher aperture ratio.
In this study, titanium silicon oxide films were grown on amorphous silicon and poly-crystal silicon by liquid phase deposition, the addition of NH4OH in the growth solution can control the PH value and prevent the amorphous and poly-crystalline silicon over etching by HF.
The physical and chemical properties of titanium silicon oxide film by means of several measuring instruments, including Fourier transform infrared spectrometer (FTIR), and X-Ray diffractometer (XRD). An Al/titanium silicon oxide/a-Si or poly-Si/Si metal-oxide-semiconductor (MOS) capacitor structure was used for the electrical measurements. After oxygen and nitrogen annealing, the leakage current is improved due to the reduction of the oxygen vacancy of titanium silicon oxide film. However, the electrical characteristics can be further improved by the postmetallization annealing treatment especially under the negative electric field.
Post-metallization annealing (PMA) is to use the reaction between the aluminum contact and hydroxyl groups existed on oxide surface to form active hydrogen and diffuse through the oxide to passivate the oxide traps. Therefore, titanium silicon oxide
film which treated by PMA with higher dielectric constant and lower leakage current can be obtained.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726107-164257 |
| Date | 26 July 2007 |
| Creators | Chang, Chih-te |
| Contributors | Tsu-Hsin Chang, Yu-Hao Yang, Chung-Cheng Chang, Ming-Kwei Lee, Jeng Gong |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-164257 |
| Rights | campus_withheld, Copyright information available at source archive |
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