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Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

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Identiferoai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:ucin1552657250617694
Date11 July 2019
CreatorsManjunath, Vishal Jain
PublisherUniversity of Cincinnati / OhioLINK
Source SetsOhiolink ETDs
LanguageEnglish
Detected LanguageEnglish
Typetext
Sourcehttp://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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