The objective of this thesis is to provide an initial demonstration of the feasibility
of constructing highly transparent active electronic devices. Such a demonstration
is successfully achieved in the fabrication of ZnO-based thin film transistors
(TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic
spectrum and prototypical n-channel, enhancement mode TFT characteristics.
Electrical characterization studies of these ZnO-based transparent TFTs
and of CuYO��� / ZnO / ITO p-i-n heterojunction diodes serve to elucidate the mechanisms
responsible for the behavior of these devices in particular, and of transparent
electronic devices in general. Energy band analysis of the degenerate semiconductor
/ insulator heterojunction yields insight into the phenomenon of charge injection
into an insulator, with important implications for the analysis of devices containing
heterojunctions of this nature. Finally, a novel technique for simultaneously characterizing
carrier injection into an insulator and interface channel formation, the
capacitance-(voltage, frequency) [C-(V,f)] technique, is proposed and employed in
the characterization of ZnO-based TFT structures. / Graduation date: 2003
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/32351 |
| Date | 05 June 2002 |
| Creators | Hoffman, Randy L. |
| Contributors | Wager, John F. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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