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Solid source molecular beam epitaxy of InP-based composite-channel high electron mobility transistor structures of microwave and millimeter-wave power applications

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1. http://hdl.handle.net/1853/14859
2. 590617

Identifer	oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/14859
Date	08 1900
Creators	Kim, Tong-Ho
Publisher	Georgia Institute of Technology
Source Sets	Georgia Tech Electronic Thesis and Dissertation Archive
Detected Language	English
Type	Dissertation
Rights	Access restricted to authorized Georgia Tech users only.