Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with
the ohmic test structures and the Hall bar geometries. The DC characteristics of
normal gate transistors were evaluated at room temperature and at 77K and the
threshold voltages were extracted from the measurements and compared to the
theoretical results. The performance of normal gate transistors was reasonable.
The sheet carrier density and the mobility extracted from Hall measurements using
the Hall bar geometry showed increase of carrier density with increasing gate
voltage and an increase of mobility with increasing carrier density. The contact
resistance obtained from the ohmic test structure was high and not uniform within
the sample. / Graduation date: 1991
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/38134 |
| Date | 12 July 1990 |
| Creators | Yindeepol, Wipawan, 1960- |
| Contributors | Goodnick, Stephen M. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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