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Luminiscence polovodičů studovaná rastrovací optickou mikroskopií v blízkém poli / Luminescence of semiconductors studied by scanning near-field optical microscopy

This work is focused on the study of luminescence of atomic thin layers of transition metal chalkogenides (eg. MoS2). In the experimental part, the work deals with the preparation of atomic thin layers of semiconducting chalcogenides and the subsequent manufacturing of plasmonic interference structures around these layers. The illumination of the interference structure will create a standing plasmonic wave that will excite the photoluminescence of the semiconductor. Photoluminescence was studied both by far-field spectroscopy and near-field optical microscopy.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:320110
Date January 2017
CreatorsTěšík, Jan
ContributorsKlapetek, Petr, Křápek, Vlastimil
PublisherVysoké učení technické v Brně. Fakulta strojního inženýrství
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

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