Graphene is a semimetal with zero band gap. Position of Fermi level can be changed by applied gate voltage, which results in a change of free carier concentration. This work focuses on a simultaneous measurement of surface potential by Kelvin probe force microscopy (KPFM) and transport response of graphene Hall bars in different relative humidities and with applying gate voltage. The transport response was also observed in case of graphene Hall bar structure modified by local anodic oxidation (LAO).
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:417171 |
| Date | January 2020 |
| Creators | Štrba, Lukáš |
| Contributors | Čech, Vladimír, Bartošík, Miroslav |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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