In this work, argon, hydrogen and methane are used as gas sources and nitrogen is used as the doping source. Microwave plasma chemical vapor deposition and two-steps deposition processes have been applied to grow the nitrogen-doped diamond thin film on n-type (111) silicon substrate. Systematical experiments are performed to study the dependence of grown process on working pressure, temperature, microwave power, DC bias, the duration of growth time and the flow rates of gas mixture of argon, methane and nitrogen. The nitrogen-doped diamond thin films are examined by SEM, XRD, Raman and I-V. Raman spectroscopy is the most efficient tool for analyzes the quality of diamond thin films growth. The results show that a positive DC bias can enhance the doping concentration and the qualities of diamond thin films. Form the analyzing results, nitrogen is doped in the sp2 structural grain boundaries of crystallites. The longer diamond thin film grown is, the crystallites become larger and the grain boundaries become smaller, that leads to the larger resistivity of the thin films.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0127104-231706 |
| Date | 27 January 2004 |
| Creators | Liu, Tsung-Shian |
| Contributors | Tai-Fa Young, Ting-Chang Chang, Ying-Chung Chen, Der-Jung Jangd |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0127104-231706 |
| Rights | unrestricted, Copyright information available at source archive |
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