We report approaches to grow ultrathin Ru films for application as a seed layer and Cu diffusion barrier. For chemical vapor deposition (CVD) with Ru3(CO)12 we show the role surface hydroxyl groups have in nucleating the Ru islands that grow into a continuous film in a Volmer-Weber process, and how the nucleation density can be increased by applying a CO or NH3 overpressure. Thinner continuous films evolve in the presence of a CO overpressure. We report an optimun ammonia overpressure for Ru nucleation and that leads to deposition of smoother Ru thin films. Finally, we report a comparison of amorphous Ru films that are alloyed with P or B and demonstrate 3-nm thick amorphous Ru(B) films function as a Cu diffusion barrier.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:20512 |
| Date | 22 July 2016 |
| Creators | Liao, Wen, Bost, Daniel, Ekerdt, John G. |
| Publisher | Technische Universität Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Source | AMC 2015 – Advanced Metallization Conference |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | urn:nbn:de:bsz:ch1-qucosa-206986, qucosa:20503 |
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