In the thesis the development of two equipment for preparation of ultrathin films under ultrahign vacuum conditions (UHV) is discussed. Here, additionally to a brief description of theoretical principles, more details on the design of these units are given. In the first part the design of a thermal source of oxygen or hydrogen atomic beams is discussed. Further, a design and construction of an ion–atomic beam source for ion-beam assisted deposition of thin films is detailed. The source combines the principles of an efusion cell and electron-impact ion beam source generating ions of (30 – 100) eV energy. The source has been successfully applied for the growth of GaN on the Si(111) 7x7 substrate under room temperature.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:233933 |
| Date | January 2010 |
| Creators | Mach, Jindřich |
| Contributors | Čech, Vladimír, Lencová, Bohumila, Šikola, Tomáš |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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