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A High Density Non-Classical Unipolar CMOS with Two Embedded Oxide NMOS Load

In this thesis, we propose a high density non-classical unipolar CMOS width two embedded oxide (2EO) NMOS load. The words ¡§unipolar CMOS¡¨ refer to the fact that the conventional NMOS driver and the proposed 2EO NMOS load are presented in which the electron is the only carrier used. Among them, the 2EO scheme is used to isolate the inversion current. And the dominant current in the 2EO NMOS load is the punch through current which is not a destructive current mechanism. Our proposed CMOS, due to the same carrier used, does not have to compensate the layout width in load design. In addition, the shared terminal of output contacts and the elimination of N-well technique are also presented in our proposed CMOS. Therefore, the layout area can be reduced 72%, in comparison with conventional CMOS. Furthermore, the packing density can be increased and the fabrication cost can be reduced, respectively. We also find out that the delay time can be improved 39% to increase the operating frequency, as compared with the convention CMOS.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0725112-103653
Date25 July 2012
CreatorsLin, Chia-Hsien
ContributorsFeng-Der Albert Chin, Cheewee Liu, Pei-Wen Li, James B. Kuo, Jyi-Tsong Lin
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-103653
Rightsuser_define, Copyright information available at source archive

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