Organic transistors with vertical current transport like the Permeable Base Transistor (PBT) show a high performance while allowing for an easy fabrication on the device level. For a simple implementation on a circuit level, ambipolar transistors, providing the functionality of n-type as well as p-type devices, have a benefit for complementary logic. This requires transistors where electrons and holes are present. Here, we investigate a potential concept of bipolar current transport in PBTs. In our device structure, we use the base electrode to control the current flow, but also to investigate the charge carrier transport. The ambipolar organic PBT achieves a charge carrier transmission of 88% and a current density above 200mA=cm². Additionally, we show that recombination near the base is required in an ambipolar PBT for a good performance.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:35191 |
| Date | 10 September 2019 |
| Creators | Kaschura, Felix, Fischer, Axel, Kasemann, Daniel, Leo, Karl |
| Publisher | SPIE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 10.1117/12.2186994, info:eu-repo/grantAgreement/European Commission/FP7 | SP2 | ERC/267995 //New Organic Semiconductor Device Concepts/NUDEV |
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