This thesis studies the nonlinear characteristics of microwave devices by Volterra series because it can analyze the nonlinear devices with memory. And a nonlinear model was established by measurement data for Volterra series analysis. This content is composed of three parts. The first part devote to introduce the nonlinear phenomenon and theories of nonlinear analysis. The difference between power series and Volterra series could be realized by deriving them. The second part is to introduce the physical characteristics of pHEMTs and demonstrate the procedure of establishing small signal model and fitting nonlinear equations of currents and capacitances, and a process of nonlinear model analysis by Volterra series is shown. The third part is to describe the experimental arrangements and analyze nonlinear characteristics of pHEMTs actually with above methods. And the relationship among nonlinear sources was discussed. The device was fabricated by WIN 0.15£gm InGaAs process and measured by on wafer measurements.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0902109-112806 |
| Date | 02 September 2009 |
| Creators | Yu, Shao-wei |
| Contributors | Wen-Liang Li, Ken-Huang Lin, Chih-Wen Kuo, Tzyy-Sheng Horng, Chie-In Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902109-112806 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0023 seconds