As the miniaturization keeps decreasing in semiconductor device fabrication, metal contamination on silicon surfaces becomes critical. An investigation of the fundamental mechanism of metal contamination process on silicon surface is therefore important. Kinetics and thermodynamics of the copper out-plating process on silicon surfaces in diluted HF solutions are both evaluated by several analytical methods.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc278367 |
| Date | 08 1900 |
| Creators | Chien, Hsu-Yueh |
| Contributors | Chyan, Oliver Ming-Ren, Acree, William E. (William Eugene) |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | vii, 77 leaves: ill., Text |
| Rights | Public, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved., Chien, Hsu-Yueh |
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