Return to search

Finite element analysis of surface acoustic wave resonators

Surface Acoustic Wave (SAW) devices are key components in RF and IF stages of many electronic systems. A Surface Acoustic wave is a mechanical wave, which is excited on the surface of a piezoelectric substrate, when an alternating electric voltage is applied through a comb-like interdigital transducer (electrodes) patterned on it. Most SAW applications to date have been in the sub-2GHz region, but emerging applications require SAW devices at higher frequencies. The traditional models are inadequate to account for pronounced second order effects at the GHz range and also new microfabrication techniques are required to obtain quality devices as the critical dimensions shrink into the nano-scale range at these frequencies. The finite element method (a numerical method of solving differential equations) has the potential to account for these effects and ever increasing sub-micron processing capabilities of LIGA (X-ray lithography) present a promising outlook for high frequency SAW device modeling and fabrication respectively. <p>A finite element model has been developed using commercial software ANSYS for one port SAW resonators and is presented in this thesis. The one port SAW resonators are generally connected in form of ladder networks to form low-loss SAW filters. The spacing between the electrodes and the velocity of the SAW determine the frequency of operation of these devices. A finite element model has been developed for three different types of SAWdevices namely Rayleigh, leaky and longitudinal leaky SAW (LLSAW). The LLSAW has higher velocity as compared to other two types and hence considered in this work as a good prospect for high frequency SAW devices. <p>A full finite element model could not be solved due to high computing requirements and hence some assumptions were made and the results were validated against published results in the literature. The results indicate that even with simplifying assumptions and approximations FE model provides reasonably accurate results, that can be used in device design. Some of the simulations (in LLSAW based devices) in this work were also done with a view towards using LIGA (X-ray lithography) for fabrication of high frequency devices as they have the capability for high aspect ratios.

Identiferoai:union.ndltd.org:USASK/oai:usask.ca:etd-07022006-160413
Date03 July 2006
CreatorsKannan, Thirumalai
ContributorsKo, Seok-Bum, Klymyshyn, David M., Johanson, Robert E., Dodds, David E., Torvi, David A.
PublisherUniversity of Saskatchewan
Source SetsUniversity of Saskatchewan Library
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://library.usask.ca/theses/available/etd-07022006-160413/
Rightsunrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to University of Saskatchewan or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.

Page generated in 0.002 seconds