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Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation technique

Thesis(M.S.)--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/228033155
Date January 2006
CreatorsYellai, Kashyap, Williams, John R.
PublisherAuburn, Ala. ,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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