Previous studies have attempted to probe the structure of ultra-thin Nickel silicide films as they evolve in the manufacturing process with limited success. These studies have used ultra-thin Nickel silicide films that were quenched during the manufacturer's annealing process at select temperatures. This study aims to determine the structure of quenched ultra-thin Ni-Si films using Grazing Incidence X-Ray Absorption Near Edge Spectroscopy (GI-XANES) and ab-initio calculations (FDMNES). Successful calculations were prepared for the δ and θ Ni2Si phases, as well as the Ni3Si2, NiSi and NiSi2 phases. The GI-XANES experimental data was taken at the Canadian Light Source, at the Hard X-Ray Microanalysis Beamline (HXMA). XANES and FDMNES are used to identify two phases of the ultra-thin films: the as-deposited phase as a low-ordered Ni3Si2 phase, and the epitaxial NiSi2 phase was found in samples annealed past 400˚C.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:OGU.10214/6380 |
| Date | 16 April 2013 |
| Creators | Arthur, Zachary |
| Contributors | Jiang, De-Tong |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Rights | http://creativecommons.org/licenses/by-nc-sa/2.5/ca/ |
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