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Photoluminescence and X-ray diffraction studies of MOCVD grown GaAs₁₋̳xSb̳x hetero-structures and quantum wells. / 以光致發光譜和高解析度X射線衍射譜研究砷銻化鎵外延層和量子井 / Photoluminescence and X-ray diffraction studies of MOCVD grown GaAs₁₋̳xSb̳x hetero-structures and quantum wells. / Yi guang zhi fa guang pu he gao jie xi du X she xian yan she pu yan jiu shen ti hua jia wai yan ceng he liang zi jing

Iu Kwan Sai = 以光致發光譜和高解析度X射線衍射譜研究砷銻化鎵外延層和量子井 / 姚昀樨. / On t.p. "̳x" is subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2003. / Includes bibliographical references (leaves 93-95). / Text in English; abstracts in English and Chinese. / Iu Kwan Sai = Yi guang zhi fa guang pu he gao jie xi du X she xian yan she pu yan jiu shen ti hua jia wai yan ceng he liang zi jing / Yao Yunxi. / ACKNOWLEDGMENTS --- p.i / ABSTRACT --- p.ii / TABLE OF CONTENTS --- p.v / LIST OF TABLES --- p.vii / LIST OF FIGURES --- p.viii / Chapter 1. --- INTRODUTION --- p.1 / Chapter 1.1 --- Motivations --- p.1 / Chapter 1.2 --- Historical Works --- p.1 / Chapter 1.3 --- This Study --- p.3 / Chapter 1.4 --- Growth Conditions of GaAs1-xSbx Alloy --- p.4 / Chapter 2. --- EXPERIMENTAL PROCEDURES --- p.5 / Chapter 2.1 --- High Resolution X-Ray Diffraction (HRXRD) --- p.5 / Chapter 2.1.1 --- The Use of HRXRD --- p.5 / Chapter 2.1.2 --- Setup of the High Resolution X-Ray Diffractometer --- p.7 / Chapter 2.1.3 --- Types of Measurements --- p.8 / Chapter 2.2 --- Photoluminescence (PL) Spectrometer --- p.10 / Chapter 2.2.1 --- The Use of PL --- p.10 / Chapter 2.2.2 --- Setup of PL spectrometer --- p.10 / Chapter 2.2.3 --- types of Measurements --- p.13 / Chapter 3. --- CHARACTERIZATION --- p.14 / Chapter 3.1 --- High Resolution X-Ray Diffraction (HRXRD) --- p.14 / Chapter 3.1.1 --- Principal Scattering Geometries --- p.14 / Chapter 3.1.2 --- Strains in the Epitaxial Layer --- p.16 / Chapter 3.1.3 --- Lattice Parameter --- p.21 / Chapter 3.1.4 --- Sb Composition --- p.24 / Chapter 3.1.5 --- Determination of Thickness --- p.24 / Chapter 3.2 --- Photoluminescence (PL) --- p.25 / Chapter 3.2.1 --- Basic Theory of PL --- p.25 / Chapter 3.2.2 --- Strain and Temperature Effect --- p.26 / Chapter 3.2.3 --- Type I and Type II PL --- p.27 / Chapter 3.2.4 --- The Energy Gap of GaAs1-xSbx --- p.28 / Chapter 4. --- RESULTS AND DISCUSSION --- p.31 / Chapter 4.1 --- Direct Analysis of HRXRD Rocking Curves --- p.31 / Chapter 4.1.1 --- GaAs1-xSbx / GaAs Quantum Wells (QWs) --- p.31 / Chapter 4.1.2 --- GaAs1-xSbx /InP Epitaxial Layers --- p.42 / Chapter 4.2 --- Computer Simulation of HRXRD --- p.51 / Chapter 4.2.1 --- Simulation Theory --- p.51 / Chapter 4.2.2 --- Simulation of Rocking Curves --- p.51 / Chapter 4.3 --- Room Temperature PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.66 / Chapter 4.4 --- Low Temperature (LT) PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.75 / Chapter 4.5 --- Excitation Power Dependent (PD) PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.78 / Chapter 4.6 --- Temperature Dependent (TD) PL of GAAs1-xSBx Quantum Wells and Epitaxial Layers --- p.85 / Chapter 5. --- CONCLUSIONS --- p.90 / REFERENCES --- p.93

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_324275
Date January 2003
ContributorsIu, Kwan Sai., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, xi, 95 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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