In this thesis, we use reactive RF magnetron sputtering to deposit zinc oxide (ZnO) buffer layer and main layer on SiO2/Si substrate at room temperature. After various annealing treatments, the ZnO nanowires can be obtained. The effects of buffer layer on the crystallization of ZnO main layer and the zinc-to-oxygen ratio in the main layer on the growth of the ZnO nanowires are analyzed by PL, SEM, XRD and EDS. Finally, the growth mechanism of the ZnO nanowires is investigated by various annealing temperatures.
According to the experimental results, surplus zinc in the main layer is necessary for the ZnO nanowires growth. When the annealing temperature is higher than the melting point of zinc, it will melt and be extruded onto thin film surface as a result of the thermal stress. As soon as the melting zinc on the film surface reacts with the oxygen in the air, ZnO nanowires can be obtained. The optimum ZnO nanowires which possess better morphology and high density are revealed by conventional thermal annealing at 600¢J for 90 minutes.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720107-164657 |
| Date | 20 July 2007 |
| Creators | Chin, Huai-shan |
| Contributors | Chien-Chuan Cheng, Chean-Cheng Su, Ying-Chung Chen, Chih-Yu Huang, Mau-Phon Houng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720107-164657 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0016 seconds