In recent years, ionic amorphous oxide semiconductors have become one of the hottest research fields due to their wide application. Ionic amorphous oxide semiconductors have high mobility even deposited at low temperature, therefore ionic amorphous oxide semiconductors will play the important roles for the next optoelectronic devices generation.
Zinc oxide (ZnO) is a II-VI compound semiconductor with a wide direct bandgap of 3.37 eV. Therefore, ZnO have uniform carrier concentration in different deposited process. In this study, the active channel layers of zinc tin oxide (ZTO) thin film transistors were fabricated by the sol-gel spin-coating method. These zinc tin oxide TFTs were fabricated by bottom-gate bottom-contact-type TFTs.
The Experimental results have shown that the electrical properties of the zinc tin oxide TFTs are strongly dependent on ambient oxygen. However, in this study, the dynamic gate bias stability on the electrical properties of zinc tin oxide TFTs have been investigated. In particular, the possibility of sol-gel Zinc tin oxide thin film transistors as a gas sensor is also discussed at last.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0630109-145957 |
| Date | 30 June 2009 |
| Creators | Chen, Yu-chun |
| Contributors | Tzyy-Ming Cheng, Ting-Chang Chang, Cheng-Tung Huang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630109-145957 |
| Rights | not_available, Copyright information available at source archive |
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