The off-state leakage current under back light illumination is, in particular, a serious problem in the multimedia displays that require high intensity backlight illumination. The photo leakage current characteristic of flexible a-Si:H TFTs has been measured in this study .
The device activation energy (Ea) of a-Si:H TFTs extracted from various temperature measurements are different from those of typical a-Si:H TFTs, because the Fermi level of a-Si:H TFTs are modulate by the density of states (DOS) in the a-Si:H band gap. The information on DOS is important for understanding the physical mechanisms responsible for the device behavior. It¡¦s related to the threshold voltage,iii
subthreshold slope, field effect mobility and the stability of the TFTs.
Experimental results show the photo leakage currents of a-Si:H TFTs under tensile stress are less than that of flattened a-Si:H TFTs stemmed the weak light intensity. In addition, the small shifts of threshold voltage and subthreshold swing are resulted from the smaller Ea in a-Si:H channel material.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0710107-170129 |
| Date | 10 July 2007 |
| Creators | Lin, Yi-ping |
| Contributors | Ting-Chang Chang, An-Kuo Chu, Mei-Ying Chang, Cheng-Tung Huang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710107-170129 |
| Rights | restricted, Copyright information available at source archive |
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