The main aim of the thesis is a frequency stabilization of the DFB semiconductor laser diodes. The temperature stability of the laser diode chip, the stability and the noise of the injection current and the backward reflections are the crucial parameters which affects the frequency stability. These influences are described and the resolution is proposed. The theory of the external methods of the frequency stabilization and the comparison of these methods is presented. One method was choosed and this method was realized for 760 and 1540 nm wavelength laser diodes. In this method was used the frequency stabilization based on the linear absorption to the spectral lines of the gases. The diploma work is closed by the measured results of the frequency stability of the used laser diodes and by the comparison of level of stability achieved by the other methods.
Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:219356 |
Date | January 2011 |
Creators | Kozelský, Adam |
Contributors | Stehlík, Jiří, Mikel, Břetislav |
Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
Source Sets | Czech ETDs |
Language | Czech |
Detected Language | English |
Type | info:eu-repo/semantics/masterThesis |
Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.0018 seconds