This thesis deals with the reliability and life-time ofelectronic components and ways to determine these factors.Plastic encapsulated and open test circuits were assessed atdifferent humidity and temperature conditions. From the resultsan acceleration factor could be derived using the Arrheniusrelation. This factor is used to determine failure rates atdifferent drift conditions under accelerated test conditions. Aformula for the factor containing both relative humidity andtemperature could be established and was found to hold also formeasurements published by others. Electrostatic discharge (ESD) transients were studiedexperimentally and by simulation with good agreement. A verysensitive method to detect latent failures of two kinds wasintroduced by nonlinearity measurements utilizing the thirdharmonic of a test signal. The ESD-susceptibility dependence ondesign and technology is shown and can be used to improvebuilt-in reliability. Influences in the performance of semiconductor devices fromdefects like fixed charges and ions were interpreted for thefirst time by simulation using a 2D- finite element componentprogram. Significant results gave an application to a MOSFETdevice showing parameter derating, especially the change of thethreshold value. A short description of later development insimulation methods with new, more powerful tools improvingcomponent performance and reliability is given. Charged thin films of Teflon, so calledelectrets, are used as microphone membranes. Theelectret voltage is a suitable reliability factor. Fromexperimental results a mathematical relation including thetemperature was established for the rate of decay of theelectret voltage with time. A method to charge the electretswith radioactive sources is outlined and described in apatent. Finally an attempt was done to analyze the reliability ofthin film circuits by mathematical methods. Bell LabsintroducedRC-feedback filters realized in tantalum thin filmtechnology. The phase shift of the filter is about π or180°. A mathematical apparatus was developed to calculatethe change in frequency and attenuation from small componentvariations in resistors and capacitors. First and higher ordercorrections were derived, using expansion by the Taylor seriesfor the higher order. <b>Keywords:</b>reliability, failure mechanism, accelerationtests, ESD, latent failure, plastic encapsulation, electret,thin film
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:kth-3615 |
| Date | January 2003 |
| Creators | Hellström, Sten |
| Publisher | KTH, Mikroelektronik och informationsteknik, IMIT, Kista : Mikroelektronik och informationsteknik |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Doctoral thesis, monograph, info:eu-repo/semantics/doctoralThesis, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | Trita-EKT, 1650-8599 ; 2003:2 |
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