In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and surveyed. And an Al/ALD-TiO2/GaAs MOS structure was used for the electrical characterizations. For the electrical property improvements, we investigated the atomic layer deposited TiO2 films by the (NH4)2Sx treatments for GaAs substrate. The leakage currents and the hysteresis loop flatband voltage shift can be improved for ALD-TiO2 films on S-GaAs.
Furthermore, in order to resist the leakage current from the grain boundary of the polycrystalline TiO2 films, amorphous-like structure of TiO2 thinner films are investigated. The combination of sulfur passivation and amorphous-like structure thinner films is sufficient to improve the electrical properties effectively.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0724108-160242 |
| Date | 24 July 2008 |
| Creators | Kuo, Ting-Huang |
| Contributors | Gong Jeng, Wen-Tai Lin, Ikai Lo, Ming-Kwei Lee, Ying-Lang Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242 |
| Rights | withheld, Copyright information available at source archive |
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