In this study, SiO2-xFx films were deposited on Si and amorphous silicon, their physical and chemical properties were measured. An Al/ SiO2-xFx /Si and Al/ SiO2-xFx/a-Si/Si MOS structures were used for the electrical measurements. To improve the electrical properties, we investigated the characteristics of SiO2-xFx films after annealing in nitrogen and oxygen ambient.
We can find the leakage current density can be reduced to about 1.09¡Ñ 10-6 A/cm2 and 1.03¡Ñ 10-7 at -1 MV/cm and at 1 MV/cm after annealing in oxygen ambient. Although the leakage current is improved one order but the dielectric constant is increase.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0812108-141338 |
| Date | 12 August 2008 |
| Creators | Chia, Chun-Wei |
| Contributors | Wen-Tai Lin, Ying-Lang Wang, Ming-Kwei Lee, Gong Jeng, Ikai Lo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812108-141338 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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