Solid-state amorphous materials show amazing promise in thin-film electronics. The interface-to-bulk ratio of thin films makes interfacial chemistries of these systems of utmost importance. Thin films of amorphous metals, dielectrics and semiconductors have novel chemistries that are not only based upon their elemental constituent makeup, but also based upon the method with which the amorphous material is deposited and treated after deposition. The chemical attributes unique to amorphous, thin-film systems are defined primarily through the utilization of solution-processed aluminum oxide phosphate dielectric material and Zr������Cu������Al������Ni������ metal. the chemical findings wrought via the observation of interactions between amorphous metal-dielectric systems are applied to semiconductor/insulator systems to illustrate the use of the same general chemical principles applying to diverse problems. Finally in the appendices, the systems are utilized to create extremely-thin tunneling electronic devices and optical metamaterials as well as innovative classroom material. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from Dec. 13, 2011 - Dec. 13, 2012
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/26076 |
| Date | 20 October 2011 |
| Creators | Knutson, Christopher C. |
| Contributors | Keszler, Douglas |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
Page generated in 0.0023 seconds