In this study, a standard bulk FET design is fabricated with a piezoelectric gate, allowing a microwave-frequency voltage signal to be transmitted from a transducer to the transistor via acoustic conduction through the substrate. Using a single polycrystalline aluminum nitride film as the piezoelectric material, microwave-frequency piezoelectric transducers were fabricated in parallel with piezoelectric FETs. These device pairs function by generating high frequency acoustic waves in the substrate via application of AC voltage to the transducers; the transistors then recover these signals by detecting these waves in their gates via the piezoelectric film, reproducing an attenuated version of the original voltage signal. By taking advantage of the active nature of the transistor and properly controlling the gate and drain bias voltages to maximize gain, the signal recovered by the transistor can be amplified beyond what is passively recovered. In this paper, the design, fabrication, and testing processes for these devices are described at length; the results of these processes, demonstrating devices equivalent to standard FETs that are capable of harnessing incident acoustic waves to generate AC voltages at microwave frequencies, are also presented.
| Identifer | oai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:etd2020-2414 |
| Date | 01 January 2022 |
| Creators | Minks, Luke |
| Publisher | STARS |
| Source Sets | University of Central Florida |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Electronic Theses and Dissertations, 2020- |
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