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Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy

published_or_final_version / Physics / Doctoral / Doctor of Philosophy

  1. 10.5353/th_b3124012
  2. b3124012
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/35465
Date January 2000
CreatorsDeng, Aihong., 鄧愛紅.
ContributorsFung, SHY, Beling, CD
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B31240124
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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