This work explores two very different structural systems: n-type hydrogenated amorphous silicon (a-Si:H) and gold nanoparticles (AuNPs) suspended in a matrix of organic ligands. For a-Si:H, examination of the gas-phase concentration of dopant (1-6% PH3/SiH4) and argon diluent effects includes the temperature dependent conductivity, low-frequency electronic noise, and Raman spectroscopy to examine structure. It is found that a-Si:H samples grown with high dopant concentration or with argon dilution exhibit an anomalous hopping conduction mechanism with an exponent of p=0.75. An experimental approach is used to determine correlations between conduction parameters, such as the pre-exponential factor and the characteristic temperature, rather than an analysis of existing models to explain the anomalous conduction. From these results, the anomalous conduction is a result of a change in the shape of the density of states and not a shift of the Fermi level with dopant. Additionally, it is found that argon dilution increases the carrier mobility, reduces the doping efficiency, and causes a degradation of the short-range order. With AuNPs, a comparison of temperature dependent conductivity and low-frequency noise shows that the temperature coefficient of resistance (TCR) is independent of the length of interparticle distance while the noise magnitude decreases.
Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc1833556 |
Date | 08 1900 |
Creators | Western, Brianna J |
Contributors | Littler, Chris L, Syllaios, Athanasios J, Philipose, Usha, Lin, Yuankun, Glass, Gary |
Publisher | University of North Texas |
Source Sets | University of North Texas |
Language | English |
Detected Language | English |
Type | Thesis or Dissertation |
Format | ix, 105 pages, Text |
Rights | Public, Western, Brianna J, Copyright, Copyright is held by the author, unless otherwise noted. All rights Reserved. |
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