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Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region

Thesis (M.Mat.S.E.)--University of Delaware, 2007. / Principal faculty advisor: Robert L. Opila, Dept. of Materials Science & Engineering. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/318584599
Date January 2009
CreatorsSwaminathan, Krishna.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceAccess to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 83 p.

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