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Thermodynamic Analysis on ZnSxSe1-x Grown by Atomic Layer Epitaxy

Atomic Layer Epitaxy is a stepwise deposition process by supplying the sources materials alternatively. This deposition technique provides the monolayer control of film thickness and the uniform film growth over a large area. ZnSxSe1-x layers were grown epitaxially onto Si and GaAs substrate by using DMZn and H2S , H2Se gases for the reactant source. Owing to the self-limiting characteristics of ALE process, ZnSxSe1-x monolayers could be deposited over a wide range of temperature within growth window. In this study, for obtaining high crystalline quality ZnSxSe1-x epitaxial films, various growth conditions were investigated including substrate temperature, the flow rate of DMZn, H2S and H2Se, H2 purge duration and pulse duration etc..
A thermodynamic analysis based the calculation of Seki et. al [6], was used to investigate the effects by varying the substrate temperature, input mole ratio of group VI source gases on equilibrium partial pressure, solid composition and solid-vapor distribution relation of this alloy. The interaction parameter of ZnSxSe1-x, £[, was estimated by using the delta-lattice parameter (DLP) model suggested by Stringfellow [39]. Finally, it shows that the thermodynamic analysis provides a useful guideline for the growth of ZnSxSe1-x alloy on Si and GaAs substrates.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0703103-102111
Date03 July 2003
CreatorsWang, Hong-Yi
ContributorsAi-Na Hung, Wei-Chou Hsu, Cheu-Pyeng Cheng, Uerng-Yih Ueng, Yen-Sheng Lin
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703103-102111
Rightsnot_available, Copyright information available at source archive

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