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Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

abstract: A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT) and oxide defects (NOT) which are caused by ionizing radiation exposure. Existing models that attempt to predict this excess base current response are derived and discussed in detail. An improved model is proposed which modifies the existing model and incorporates the impact of charged interface trap defects on radiation-induced excess base current. The improved accuracy of the new model in predicting excess base current response in lateral PNP (LPNP) is then verified with Technology Computer Aided Design (TCAD) simulations. Finally, experimental data and compared with the improved and existing model calculations. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2017

Identiferoai:union.ndltd.org:asu.edu/item:46303
Date January 2017
ContributorsTolleson, Blayne S. (Author), Barnaby, Hugh J (Advisor), Gonzalez-Velo, Yago (Committee member), Kitchen, Jennifer (Committee member), Arizona State University (Publisher)
Source SetsArizona State University
LanguageEnglish
Detected LanguageEnglish
TypeMasters Thesis
Format72 pages
Rightshttp://rightsstatements.org/vocab/InC/1.0/, All Rights Reserved

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