The International Technology Roadmap for Semiconductors projects that embedded memories will occupy increasing System-on-Chip area. The growing density of integration increases the likelihood of fabrication faults. The proposed memory repair strategy employs forward error correction at the system level and mitigates the impact of memory faults through permutation of high sensitivity regions. The effectiveness of the proposed repair technique is demonstrated on a 19.4-Mbit de-interleaver SRAM memory of an ISDB-T digital baseband OFDM receiver in 65-nm CMOS. The proposed technique introduces a single multiplexer delay overhead and a configurable area overhead of M/i bits, where M is the number of memory rows and i is an integer from 1 to M, inclusive. The proposed strategy achieves a measured 0.15 dB gain
improvement at a 2e-4 Quasi-Error-Free (QEF) BER in the presence of memory faults for an AWGN channel.
| Identifer | oai:union.ndltd.org:TORONTO/oai:tspace.library.utoronto.ca:1807/42901 |
| Date | 27 November 2013 |
| Creators | Smolyakov, Vadim |
| Contributors | Gulak, P. Glenn |
| Source Sets | University of Toronto |
| Language | en_ca |
| Detected Language | English |
| Type | Thesis |
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