CMOS temperature sensor utilizing interface-trap charge pumping

Description

The objective of this thesis is to introduce an alternative temperature sensor
in CMOS technology with small area, low power consumption, and high resolution
that can be easily interfaced. A novel temperature sensor utilizing the interface–trap
charge pumping phenomenon and the temperature sensitivity of generation current
is proposed.
This thesis presents the design and characterization of the proposed temperature
sensor fabricated in 0.18µm CMOS technology. The prototype sensor is characterized
for the temperature range of 27oC–120oC. It has frequency output and exhibits linear
transfer characteristics, high sensitivity, and high resolution. This temperature sensor
is proposed for microprocessor thermal management applications.

Links & Downloads

1. http://hdl.handle.net/1969.1/4157

Tags

temperature sensor

cmos sensor

silicon sensor

thermal management

interface trap charge pump

gate controlled diode

Additional Fields

Identifer	oai:union.ndltd.org:tamu.edu/oai:repository.tamu.edu:1969.1/4157
Date	30 October 2006
Creators	Berber, Feyza
Contributors	Karsilay, Aydin I.
Publisher	Texas A&M University
Source Sets	Texas A and M University
Language	en_US
Detected Language	English
Type	Book, Thesis, Electronic Thesis, text
Format	883121 bytes, electronic, application/pdf, born digital