Abstract
AlN thin films grown on Si¡BGlass¡BSiO2 and Si3N4 substrate by RF magnetron sputtering technique with AlN target has been studied.Room temperature growth was applied to this study.During thin film growing, sputtering work pressure, sputtering power, sputtering working distance and sputtering time are those key parameters to be adjusted in order to highly C-axis prefer orientation AlN thin films.
The microstructures of the AlN films were examined by x-ray diffraction. TEM was adopted to observe grain growth of the AlN films. The results was compared with the results of reactive RF magnetron sputtering.
The results of the X-ray patterns showed that the strong C-axis prefer orientation of the AlN films were obtained with AlN target. in a 17¢Q long sputtering working distance condition, chemical composition of substrate can help to growth of AlN films. The column structures of AlN films can be observed by TEM.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0606102-154129 |
| Date | 06 June 2002 |
| Creators | Lu, Hsun-Yi |
| Contributors | Der-Shin Gan, K.Y.Hsieh, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606102-154129 |
| Rights | restricted, Copyright information available at source archive |
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