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Simulation of dopant diffusion in silicon using finite element method : an adaptive meshing approach

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1. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291751

Identifer	oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:291751
Date	January 1988
Creators	Ismail, Razali
Publisher	University of Cambridge
Source Sets	Ethos UK
Detected Language	English
Type	Electronic Thesis or Dissertation