This thesis presents the techniques and results of our x-ray structural studies of strained Ga$ sb{1-x}$In$ sb{x}$As epilayers grown on GaAs (001) by metallorganic chemical vapor deposition. / By combining conventional x-ray techniques with newly developed glancing incidence and reflectivity measurements, we study both the out-of-plane and the in-plane structure. We also obtain direct information on the mechanisms of the structural relaxation which occurs in these systems. The techniques we have used are based on using a conventional x-ray source and could be widely used to characterize and study growth processes and sample quality. / Using the conventional characterization of the positions, widths, and intensities of Bragg peaks lattice parameters, domain sizes and strains have been evaluated. Studying the shape of the Bragg peak shows that the simple theoretical models based on the existence of a critical thickness due to dislocation can not be used to explain the structural relaxation observed. Our results based on thin (500 $ pm$ 12A, $x=0.19 pm 0.003$) and thick (40000 $ pm$ 1000A, $x=0.16 pm 0.01$) epilayers require a complicated microstructure in a transition region between the substrate and the surface of the epilayers.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:QMM.39367 |
| Date | January 1992 |
| Creators | Shi, Yushan |
| Publisher | McGill University |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Format | application/pdf |
| Coverage | Doctor of Philosophy (Department of Physics.) |
| Rights | All items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated. |
| Relation | alephsysno: 001318461, proquestno: NN80266, Theses scanned by UMI/ProQuest. |
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