Boron-doped carbon nanotubes are predicted to behave as semiconductors over a large range of diameters and chiralities and might thus constitute a suitable class of material for nanoelectronics technology. Boron-doped CNTs were reported as by-products when BC2N nanotubes were prepared by an arc-discharge method. The potential doping of CNTs with different kinds of atoms might provide a mechanism for controlling their electronic properties. We have synthesized boron-doped carbon nanotubes (CNTs) directly on copper catalyst by decomposition of B(OCH3)3 in chemical vapor deposition method. The results were characterized and analyzed by scanning electron microscopy (SEM), Raman, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), solid-state NMR and TGA.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0907111-025211 |
Date | 07 September 2011 |
Creators | Chen, Yun-chu |
Contributors | Tsu-Hsin Chang, Hsiu-Wei Chen, Chao-Ming Chiang |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907111-025211 |
Rights | user_define, Copyright information available at source archive |
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