In this work, we studied the optical characteristics of the coupled double DBR structure. We use the conventional transfer matrix simulation to find the intermediate multilayer periods (NC), and control the position of the transmission peak and stop band. Sample is grown by solid source molecular beam epitaxy (MBE) on n+GaAs (001) substrate, and the InGaAs QDs (quantum dots) are grown in the coupled cavity structure. The 23 periods of DBR multilayer, GaAs (91.8 nm) / AlAs (108.1 nm), obtain 99.5% reflectivity in the 1260 nm wavelength by the simulation. After the simulation from the conventional transfer matrix method, we choose NC = 13.5, the position of the transmission peak are at 1177 and 1188 nm, and optical frequency difference = 2.27 THz (£G=11 nm) in this study.From PL spectra, we observed interference between the enhanced light fields of the two cavity modes and the agreement between measurement and simulation. This structure is potential to be a compact terahertz emission device or vertical cavity surface emitting laser in room temperature.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728110-114433 |
| Date | 28 July 2010 |
| Creators | Tsui, Po-Ting |
| Contributors | Tsong-Sheng Lay, Jian-Jang Huang, Yi-Jen Chiu, Chien-Chung Lin, Chin-Ping Yu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728110-114433 |
| Rights | unrestricted, Copyright information available at source archive |
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