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Femtosecond laser processing of crystalline silicon

This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features such as pits, cracks formation, Laser-Induced Periodic Surface Structures (LIPSS) and ablation were observed. The investigation indicated that there are two distinct mechanisms under femtosecond laser irradiation: low fluence regime with different morphological features and high fluence regime with high material removal and without complex morphological features. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/7449
Date01 1900
CreatorsTran, D. V., Lam, Yee Cheong, Zheng, H. Y., Murukeshan, V. M., Chai, J.C., Hardt, David E.
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeArticle
Format967927 bytes, application/pdf
RelationInnovation in Manufacturing Systems and Technology (IMST);

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