In this thesis, we investigated the growth of nonpolar (11-20) GaN films on LiGaO2 substrate by a simple chemical vapor deposition (CVD) process. Metallic gallium, NH3 and ultra-purity nitrogen were used as Ga, N sources and carrier gas. The X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) were used to study the influence of growth conditions such as reaction pressure, growth temperature and deposition time on the GaN epilayer¡¦s orientation and surface morphology.
It¡¦s found that GaN epilayers have different surface morphology grown on LiGaO2 substrates by the change of growth pressures (50 torr ~ 400 torr) under temperature of 950 ¢XC, NH3 gas flow of 450 sccm and the growth time of 60 minutes, and uniform a-plane GaN epilayers are found with growth pressures 50, 200 and 300 torr. In addition, we obtain uniform a-plane GaN epilayers with different surface morphology by the change of growth temperatures (900 ¢XC ~ 975 ¢XC) under pressure of 50 torr, N2/NH3 gas flow of 450/30 sccm and the growth time of 60 minutes.
Furthermore, we obtain flatter a-plane GaN epilayer by a longer growth time (120 mins) under temperature of 950 ¢XC, pressure of 50 torr and N2/NH3 gas flow of 450/30 sccm. The orientation relationship between GaN and LiGaO2 was determined as (11-20)GaN // (010)LiGaO2 and (1-100)GaN // (100)LiGaO2 by TEM analysis.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0809110-135534 |
| Date | 09 August 2010 |
| Creators | Chang, Chun-yu |
| Contributors | Jih-Jen Wu, P. Shen, D. Gan, Mitch M.C. Chou, L. Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809110-135534 |
| Rights | not_available, Copyright information available at source archive |
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