In this thesis, we investigated the growth of nonpolar GaN on (100) £^¡VLiAlO2 substrate by a simple chemical vapor deposition (CVD) process. Metallic gallium, NH3 and ultra-purity nitrogen were used as Ga, N sources and carrier gas. The X-ray diffraction and scanning electron microscopy were used to study the influence of growth conditions such as reaction pressure, growth temperature and deposition time on the GaN epilayer¡¦s orientation and surface morphology. It¡¦s found that pure c plane, c mixed m plane and pure m plane GaN epilayers can be grown on LiAlO2 substrates by the change of growth temperatures (950¢XC~1050¢XC) under 200 torr pressure and NH3/N2 (450/450sccm) gas flow. In addition, with longer deposition time (30min ~120min), nonpolar GaN epilayers show better crystal quality.
Furthermore, atomic force microscopy, Raman spectroscopy, cathodeluminescence, transmission electron microscopy were used to study the surface morphology, stress, optical properties and microstructure of the nonpolar GaN epilayers.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0723108-125023 |
| Date | 23 July 2008 |
| Creators | Yang, Wen-Fu |
| Contributors | Pouyan Shen, Jih-Jen Wu, Mitch, Ming-Chi Chou, Liuwen Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723108-125023 |
| Rights | not_available, Copyright information available at source archive |
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