This diploma thesis deals with optical properties of silicon. The main task of the work was to create silicon samples with ohmic contacts. Suitable radiation source was designed to measure absorption edge of monocrystalline silicon. Designed measuring station was realised. Measurements were performed on samples of p-type monocrystalline silicon provided by ON Semiconductor Rožnov. p. Radhoštěm. The absorbtion edge was measured.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:219524 |
| Date | January 2012 |
| Creators | Kahánek, Tomáš |
| Contributors | Vaněk, Jiří, Špinka, Jiří |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.0016 seconds