This work investigates the compact- and TCAD modeling of III-V semiconductor based HBTs for high-power and high-speed applications. It demonstrates an approach for modeling such devices that connects compact- and TCAD modeling of such technologies. Compact model extensions are derived based on TCAD simulation. Compact modeling results for two state-of-the-art technologies are presented.:1. Introduction
2. Physical Models for TCAD Simulation
3. Bulk Calibration of Augmented Drift-Diffusion Solver
4. Device Calibration of aDD Solver
5. Application of the GICCR to III-V HBTs
6. Verification of the HICUM/L2 Model Core
7. Model Application to TSC250 InP/InGaAs HBT
8. Model Application to ETH InP/GaAsSb HBT
9. Conclusion and Outlook
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:92130 |
| Date | 11 July 2024 |
| Creators | Müller, Markus |
| Contributors | Schröter, Michael, Rodwell, Mark, Technische Universität Dresden |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
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