Modeling the interaction of a silicon (Si) surface with a pointed asperity is a crucial step towards the understanding of several phenomena related to machining of this important semiconductor.
If subjected to pressure or contact loading, Si undergoes a series of stress-driven phase transitions accompanied by large volume changes.
We developed a finite deformation constitutive model that captures the semiconductor-to-metal (cd-Si ➙ β-Si) and metal-to-amorphous (β-Si ➙ a-Si) transitions within the framework of thermodynamics with internal variables.
The model was implemented as a user material subroutine for the finite element code Abaqus/Std. in analogy to pressure sensitive, rate independent, non-associated, non-smooth multisurface plasticity. Material parameters were identified from indentation load-displacement curves in (111)-Si using a Berkovich indenter tip.
The constitutive model was verified by successfully predicting the load-displacement curves for different indenters, the residual surface profile, as well as the size and shape of the transformation zone under the indenter tip as compared to TEM results.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:70886 |
| Date | 13 July 2020 |
| Creators | Budnitzki, Michael |
| Contributors | Kuna, Meinhard, Bertram, Albrecht, TU Bergakademie Freiberg |
| Publisher | TU Bergakademie Freiberg |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/updatedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 2418092-0 |
Page generated in 0.0022 seconds