The defects and fault tolerance study is essential in the QCA devices in order to know its characteristics. Knowing the characteristics, one can understand the flow of information in a QCA system with and without manufacturing and operational defects. The manufacturing defects could be at device level or cell level. At the device level, the cell could be rotated, displaced vertically or horizontally, the cell could be missing or the size of the cell could be different. At the cell level, there could be a missing dot, dot could be displaced from its position or the size of the dots could be different. The operational defects are due to its surrounding, such as temperature or stray charge. Each of these defects and fault tolerances can be studies in detail in order to find the optimum working conditions where the information can be safely transmitted to the appropriate locations in the device.The theoretical studies have shown that at absolute temperature and without any defect, the QCA devices are operational. But it is almost impossible to manufacture a perfect or defect free device, and also it is impractical to think about operating a system at absolute zero temperature environment.Therefore, it is important to investigate the fault tolerant properties with defects and higher temperatures to see how far the QCA device can operate safely. Many studies have been done to investigate the fault tolerant properties in QCA devices. However, these studies have not completely exhausted the study of defects and temperature effects. In this study, the dot displacement and missing dots with temperature effects are investigated for the basic QCA devices and a Full Adder. In order to study fault tolerant properties, the existing theoretical model and computer simulation programs have been expanded and used. The defect characteristics have been simulated using normal distribution. / Department of Physics and Astronomy
| Identifer | oai:union.ndltd.org:BSU/oai:cardinalscholar.bsu.edu:handle/174825 |
| Date | January 2007 |
| Creators | Anduwan, Gabriel A. Y. |
| Contributors | Khatun, Mahfuza |
| Source Sets | Ball State University |
| Detected Language | English |
| Format | xiii, 132 leaves : ill. ; 28 cm. |
| Source | Virtual Press |
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