During the last decade advances in the field of sensor design and improved base materials have
pushed the radiation hardness of the current silicon detector technology to impressive performance.
It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments
at nominal luminosity (1034
cm-2s-1) for about 10 years. The current silicon detectors are unable to
cope with such an environment. Silicon carbide (SiC), which has recently been recognized as
potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy
neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were
irradiated with 1 MeV neutrons up to fluence of 1016
cm-2. It is well known that the degradation of
the detectors with irradiation, independently of the structure used for their realization, is caused by
lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and
that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct
identification of the crystal defects in terms of their electrical activity. In order to clarify the defect
kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different
samples irradiated at increasing fluences. The defect evolution was correlated with the transport
properties of the irradiated detector, always comparing with the un-irradiated one. The charge
collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to
the increasing concentration of defects as function of the neutron fluence.
| Identifer | oai:union.ndltd.org:unibo.it/oai:amsdottorato.cib.unibo.it:845 |
| Date | 19 May 2008 |
| Creators | Fabbri, Filippo <1979> |
| Contributors | Cavallini, Anna |
| Publisher | Alma Mater Studiorum - Università di Bologna |
| Source Sets | Università di Bologna |
| Language | English |
| Detected Language | English |
| Type | Doctoral Thesis, PeerReviewed |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
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