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Pressure correction of density functional theory calculations. / 密度泛函理論計算的壓力修正 / Pressure correction of density functional theory calculations. / Mi du fan han li lun ji suan de ya li xiu zheng

Lee, Shun Hang = 密度泛函理論計算的壓力修正 / 李信恆. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references (p. 67-69). / Abstracts in English and Chinese. / Lee, Shun Hang = Mi du fan han li lun ji suan de ya li xiu zheng / Li Xinheng. / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Theoretical backgrounds --- p.4 / Chapter 2.1 --- Density Functional Theory --- p.4 / Chapter 2.2 --- Pseudopotential approximation --- p.6 / Chapter 2.3 --- Car-Parrinello Molecular Dynamics --- p.8 / Chapter 3 --- Simulation details --- p.10 / Chapter 3.1 --- Simulation overview --- p.10 / Chapter 3.2 --- Electronic minimization --- p.11 / Chapter 3.2.1 --- The need and setting of electronic minimization --- p.11 / Chapter 3.2.2 --- Results and convergence of electronic minimization --- p.13 / Chapter 3.3 --- Atomic minimization --- p.13 / Chapter 3.4 --- CPMD runs and parameter settings --- p.14 / Chapter 3.4.1 --- The NVE ensemble --- p.14 / Chapter 3.4.2 --- The NVT ensemble --- p.14 / Chapter 3.5 --- Taking the average --- p.20 / Chapter 3.6 --- Check for valid stress tensors and pressure --- p.22 / Chapter 3.7 --- Check for the structure --- p.24 / Chapter 3.7.1 --- The need for structure checks --- p.24 / Chapter 3.7.2 --- Methods to check the structures --- p.24 / Chapter 4 --- Pressure Correction --- p.30 / Chapter 4.1 --- Theoretical Basis for the Correction --- p.30 / Chapter 4.2 --- CPMD Calculation Results --- p.32 / Chapter 4.2.1 --- E(V) at different T --- p.34 / Chapter 4.2.2 --- Results of stress tensor checks --- p.35 / Chapter 4.2.3 --- The EOS's found in this study --- p.38 / Chapter 4.2.4 --- Comparisons with others´ة work --- p.39 / Chapter 4.2.5 --- Difference between LDA and GGA results --- p.42 / Chapter 5 --- Magnesium Silicate (MgSiO3) --- p.45 / Chapter 5.1 --- Simulations for MgSiO3 perovskite --- p.47 / Chapter 5.1.1 --- Simulation parameters and various check --- p.47 / Chapter 5.1.2 --- Results for MgSiO3 perovskite --- p.50 / Chapter 5.2 --- Simulations for MgSiO3 post-perovskite --- p.53 / Chapter 5.2.1 --- Simulation parameters and various check --- p.53 / Chapter 5.2.2 --- Results of MgSiO3 post-perovskite --- p.55 / Chapter 6 --- Discussions --- p.58 / Chapter 6.1 --- Other thermodynamic quantities --- p.58 / Chapter 6.2 --- Asymptotic behaviour of ΔP(V) --- p.59 / Chapter 6.3 --- Applications to the exact XC functional --- p.60 / Chapter 7 --- Conclusion --- p.61 / Chapter 8 --- Appendix --- p.62 / Chapter 8.1 --- Efficient method to perform electronic minimization --- p.62 / Chapter 8.2 --- Efficient method to perform atomic minimization --- p.63 / Chapter 8.3 --- Other related settings --- p.64 / Chapter 8.4 --- Typical input files for CPMD calculations using Quantum-Espresso --- p.65 / Bibliography --- p.67

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_326467
Date January 2008
ContributorsLee, Shun Hang., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, viii, 69 p. : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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